Product Details
Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
Features
• Ultra-fast body diode
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson^Qg and Eoss
• Easy to use/drive
• Qualified for industrial grade applications according to JEDEC
(J-STD20 and JESD22)
• Pb-free plating, Halogen free mold compound
Applications
650V CoolMOS CFD2 is especially suitable for resonant switching PWM
stages for e.g. PC Silverbox, LCT TV, Lighting, Server, Telecom and Solar.
Product Description
| Type# | Description |
| ANSC PART# | ANSC-IPP65R150CFDAAKSA1 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Infineon |
| Series | CoolMOS™ |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 22.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 9.3A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 900µA |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 195.3W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
| Base Product Number | IPP65R150 |
Product Photos
Product datasheet
For more information, please download
Payment&Transportation
Official Certificate&Certificate
Standard packaging
Multiple product supply
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