Product Details
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Features
• Advanced Planar Technology
• Dual N Channel MOSFET
• Low On-Resistance
• Dynamic dV/dT Rating
• 175°C Operating Temperature
• Fast Switching
• Lead-Free, RoHS Compliant
• Automotive Qualified*
Product Description
| Type# | Description |
| ANSC PART# | ANSC-AUIRF7669L2TR |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr |
/ |
| Series | HEXFET® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 114A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 68A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5660 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 100W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Package / Case | DirectFET™ Isometric L8 |
| Base Product Number | AUIRF7669 |
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Product datasheet
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