Product Details
Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Features
■ TrenchMOS™ technology
■ Q101 compliant
■ 175 °C rated
■ Logic level compatible.
Applications
■ Automotive and general purpose power switching:
◆ 12 V, 24 V, and 42 V loads
◆ Motors, lamps and solenoids.
Product Description
| Type# | Description |
| ANSC PART# | ANSC - BUK9Y59-60E |
| Package Description | SOT-669, 4 PIN |
| Manufacturer | Nexperia |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 8.84 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (ID) | 16.7 A |
| Drain-source On Resistance-Max | 59 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 56 pF |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C |
| Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 37 W |
| Power Dissipation-Max (Abs) | 37 W |
| Pulsed Drain Current-Max (IDM) | 67 A |
| Reference Standard | IEC-60134 |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Product Photos
Product datasheet
For more information, please download
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Official Certificate&Certificate
Standard packaging
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