Product Details
SI2309CDS-T1-GE3 Overview
The maximum input capacitance of this device is 210pF @ 30V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.2A.When VGS=-60V, and ID flows to VDS at -60VVDS, the drain-source breakdown voltage is -60V in this device.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 40 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.
SI2309CDS-T1-GE3 Features
a continuous drain current (ID) of 1.2A
a drain-to-source breakdown voltage of -60V voltage
a threshold voltage of -1V
SI2309CDS-T1-GE3 Applications
SI2309CDS-T1-GE3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Product Description
| Type# | Description |
| ANSC PART# | ANSC -SI2309CDS-T1-GE3 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Vishay |
| Series | TrenchFET® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 345mOhm @ 1.25A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 1.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2309 |
Product Photos
Product datasheet
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