Product Details
Product Brief Description:
The SI2309CDS-T1-E3 is a P-Channel TrenchFET MOSFET, designed for switching applications.
It features a dual terminal form with a gull wing package and is RoHS3 compliant.
Features:
P-Channel TrenchFET MOSFET
Dual terminal form with gull wing package
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Peak reflow temperature: 260°C
Maximum junction temperature: 150°C
Maximum power dissipation: 1W (Ta) and 1.7W (Tc)
Turn-on delay time: 5 ns
Turn-off delay time: 15 ns
Rise time: 35 ns
Fall time: 35 ns
Resistance: 345 mΩ
Gate charge: 4.1 nC
Input capacitance: 210 pF
Drain to source voltage: 60V
Drain to source breakdown voltage: -60V
Continuous drain current: 1.6A (Tc) and -1.2A
Application Grade:
The SI2309CDS-T1-E3 is designed for high-frequency switching applications, such as power supplies,
motor control, and LED lighting.
Applications:
Power supplies
Motor control
LED lighting
High-frequency switching applications
Key Parameters:
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250μA
Rds On (Max) @ Id, Vgs: 345 mΩ @ 1.25A, 10V
Turn-on delay time: 5 ns
Turn-off delay time: 15 ns
Rise time: 35 ns
Fall time: 35 ns
Resistance: 345 mΩ
Gate charge: 4.1 nC
Input capacitance: 210 pF
Drain to source voltage: 60V
Drain to source breakdown voltage: -60V
Continuous drain current: 1.6A (Tc) and -1.2A
Packaging and Mounting:
Package: TO-236-3, SC-59, SOT-23-3
Mounting type: Surface mount
Moisture sensitivity level (MSL): 1 (Unlimited)
Other Information:
Radiation hardening: No
ECCN code: EAR99
JESD-609 code: e3
Factory lead time: 14 weeks
Product Description
| Type# | Description |
| ANSC PART# | ANSC -SI2309CDS-T1-E3 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr |
/ |
| Series | TrenchFET® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 345mOhm @ 1.25A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 1.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2309 |
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Product datasheet
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