Product Details
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General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Features ► Low threshold (2.0V max.) ► High input impedance ► Low input capacitance (125pF max.) ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakage ► Complementary N- and P-channel devices Applications ► Logic level interfaces - ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo voltaic drives ► Analog switches ► General purpose line drivers ► Telecom switches |
Product Description
| Type# | Description |
| ANSC PART# | ANSC - TN2510N8-G |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Microchip |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25掳C | 730mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 10V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 750mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 125 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-243AA (SOT-89) |
| Package / Case | TO-243AA |
| Base Product Number | TN2510 |
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Product datasheet
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