Product Details
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Brief Description: The SQJ415EP-T1_GE3 is a P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) . designed for automotive applications. It features a trench technology and is compliant with AEC-Q101 standards. Features: P-Channel MOSFET with a maximum continuous drain current of 30A at 25°C Drain-to-source voltage of 40V Drive voltage range of 4.5V to 10V Gate charge of 95nC at 10V Input capacitance of 6000pF at 25V Operating temperature range of -55°C to 175°C Power dissipation of 45W at 25°C Rds On (maximum) of 14mOhm at 10A and 10V Vgs (maximum) of ±20V Vgs(th) (maximum) of 2.5V at 250μA Application Grade: The SQJ415EP-T1_GE3 is designed for automotive applications and is compliant with AEC-Q101 standards, making it suitable for use in harsh environments. Applications: Automotive applications, such as power distribution, motor control, and battery management Industrial applications, such as motor control, power supplies, and battery management Consumer applications, such as power supplies, motor control, and battery management General-purpose applications, such as power supplies, motor control, and battery management Key Information: Part number: SQJ415EP-T1_GE3 Package: 8-PowerTDFN Packaging: Tape & Reel (TR) Operating temperature range: -55°C to 175°C Power dissipation: 45W at 25°C Rds On (maximum): 14mOhm at 10A and 10V Vgs (maximum): ±20V Vgs(th) (maximum): 2.5V at 250μA RoHS compliance: ROHS3 compliant MSL: 1 (Unlimited) Factory lead time: 12 weeks I hope this comprehensive description meets your requirements |
Product Description
| Type | Description |
| ANSC PART# | ANSC - SQJ415EP-T1_GE3 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr |
/ |
| Series | TrenchFET® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25掳C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SQJ415 |
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