Product Details
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Product Description The ATP304-TL-H is a P-Channel Enhancement Mode MOSFET from ON Semiconductor, designed for surface-mount applications. This MOSFET features a high avalanche energy rating of 656 mJ, making it suitable for high-power switching applications. The device has a maximum continuous drain current of 100A and a maximum drain-source voltage of 60V. Product Features · High avalanche energy rating of 656 mJ · Maximum continuous drain current of 100A · Maximum drain-source voltage of 60V · Low drain-source on-resistance of 0.0089 Ohm · High power dissipation of 90W · Operating temperature range of -40°C to 150°C · RoHS3 compliant and lead-free · Available in a tape and reel packaging
· Primary applications: High-power switching, motor control, and power conversion · Secondary applications: Audio amplifiers, DC-DC converters, and power supplies
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Product Description
| Type | Description |
| ANSC PART# | ANSC - ATP304-TL-H |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | onsemi |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 20 V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | ATPAK |
| Package / Case | ATPAK (2 Leads+Tab) |
| Base Product Number | ATP304 |
Product Photos
Product datasheet
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