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Hot sale Original SI3459BDV-T1-E3 Transistors MOSFET P-CH 60V 2.9A 6TSOP P-Channel 60 V 2.9A (Tc) 3.3W (Tc) Surface Mount

SI3459BDV-T1-E3

Model:SI3459BDV-T1-E3

Manufacturer:VISHAY

Package:SOT23-6

Detail

Product Overview 

The maximum input capacitance of this device is 350pF @ 30V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -2.9A.As shown in the table below, the drain current of this device is 0.0022A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.


Product Features  

a continuous drain current (ID) of -2.9A
a threshold voltage of -3V
a 60V drain to source voltage (Vdss)


Product Applications

There are a lot of Vishay Siliconix
SI3459BDV-T1-E3 applications of single MOSFETs transistors.

· Micro Solar Inverter

· DC/DC converters

· Power Tools

· Motor Drives and Uninterruptible Power Supples

· Synchronous Rectification

· Battery Protection Circuit

· Telecom 1 Sever Power Supplies

· Industrial Power Supplies

· PFC stages, hard switching PWM stages and resonant switching

· PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,


 

Product Description

Type

Description

ANSC PART#

ANSC - SI3459BDV-T1-E3

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Last Time Buy

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

2.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

216mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350 pF @ 30 V

FET Feature

-

Power Dissipation (Max)

3.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

Base Product Number

SI3459


Product Photos

SI3459BDV-T1-E3

Product datasheet 

For more information, please download

  

Payment&Transportation

详情8

Official Certificate&Certificate

详情页3-1

Standard packaging

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