Product Details
Description:
Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
□ Low VCE(sat)
□ Low ESW(off)
□ Discrete Super-Fast Recovery Free-Wheel Diode
□ Isolated Baseplate for Easy Heat Sinking
Applications:
□ Power Supplies
□ Induction Heating
□ Welders
Product Description
| Type | Description |
| ANSC PART# | ANSC-CM600DU-12NFH |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP |
| Pin Count | 7 |
| Case Connection | ISOLATED |
| Collector Current-Max (IC) | 600 A |
| Collector-Emitter Voltage-Max | 600 V |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Gate-Emitter Voltage-Max | 20 V |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 2 |
| Number of Terminals | 6 |
| Operating Temperature-Max | 150 °C |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2350 W |
| Qualification Status | Not Qualified |
| Reference Standard | UL RECOGNIZED |
| Surface Mount | NO |
| Terminal Finish | MATTE TIN |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| VCEsat-Max | 2.7 V |
Product Photos
Product datasheet
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