Product Details
| Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. IRF3205 Process Technology 2. Ultra Low On-Resistance 3 Dynamic dv/dt Rating 4. 175°C Operating Temperature 5. Fast Switching 6. Fully Avalanche Rated |
Product Description
| Type | Description |
| Part# | IRF3205 |
| Ihs Manufacturer | Original |
| Part Package Code | TO-220AB |
| Package Description | TO-220AB, 3 PIN |
| Pin Count | 3 |
| Reach Compliance Code | unknown |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 264 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 55 V |
| Drain Current-Max (ID) | 75 A |
| Drain-source On Resistance-Max | 0.008 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 150 W |
| Power Dissipation-Max (Abs) | 150 W |
| Pulsed Drain Current-Max (IDM) | 390 A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
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