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PDTA124XMB,315 Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 180 MHz 250 mW Surface Mount DFN1006B-3

PDTA124XMB,315

Model:PDTA124XMB,315

Manufacturer:Original

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Product Details


Brief Description: The PDTA124XMB,315 is a PNP pre-biased bipolar junction transistor (BJT) . It is a single-element, surface-mount device with a 3-XFDFN package and a built-in bias resistance ratio of 2.1. The transistor is designed for switching applications and features a high transition frequency of 180MHz.

Features:

PNP pre-biased bipolar junction transistor (BJT)
Built-in bias resistance ratio of 2.1
3-XFDFN package with surface-mount technology
High transition frequency of 180MHz
High current gain (hFE) of 80 at 5mA and 5V
High power dissipation of 250mW
High operating temperature range of -65°C to 150°C
ROHS3 compliant
Radiation hardening not required
Application Grade: The PDTA124XMB,315 is designed for high-frequency switching applications, making it suitable for use in:

Power amplifiers
Switching power supplies
High-speed data transmission systems
Automotive electronics
Industrial control systems
Applications: The PDTA124XMB,315 can be used in a variety of applications, including:

Switching power supplies for consumer electronics
High-speed data transmission systems for telecommunications
Automotive electronics, such as engine management systems and anti-lock braking systems
Industrial control systems, such as motor control and process control
Medical devices, such as defibrillators and pacemakers
Overall, the PDTA124XMB,315 is a high-performance, pre-biased bipolar junction transistor (BJT) designed for high-frequency switching applications. Its high transition frequency, high power dissipation, and high operating temperature range make it suitable for use in a wide range of applications.


Product Description


Type# Description
PART# PDTA124XMB,315
Category Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Manufacturer /
Series -
Packaging Bulk
Part Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistors Included R1 and R2
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA
Frequency - Transition 180 MHz
Power - Max 250 mW
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Supplier Device Package DFN1006B-3
Base Product Number PDTA124


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PDTA124XMB,315

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