Product Details
| DESCRIPTION NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment. |
Product Description
| Type | Description |
| ANSC PART# | ANSC - BFG591,115 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Bipolar RF Transistors | |
| Manufacturer | Original |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Part Status | Obsolete |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | 2W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 70mA, 8V |
| Current - Collector (Ic) (Max) | 200mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SC-73 |
| Base Product Number | BFG59 |
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