Product Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1360pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.4A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.A device can conduct a maximum continuous current of [90A] according to its drain current.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.
Product Features
a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 150V voltage
a threshold voltage of 4V
Product Applications
AUIRF7675M2TR applications of single MOSFETs transistors.
· Synchronous Rectification for ATX 1 Server I Telecom PSU
· Motor drives and Uninterruptible Power Supplies
· Micro Solar Inverter
· DC/DC converters
· Power Tools
· Motor Drives and Uninterruptible Power Supples
· Synchronous Rectification
· Battery Protection Circuit
· Telecom 1 Sever Power Supplies
· Industrial Power Supplies
Product Description
Type | Description |
|---|---|
ANSC PART# | ANSC - AUIRF7675M2TR |
Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr | - |
Series | HEXFET® |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150 V |
Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta), 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 56mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 2.7W (Ta), 45W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DirectFET™ Isometric M2 |
Package / Case | DirectFET™ Isometric M2 |
Base Product Number | AUIRF7675 |
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