Product Description

The AUIRGDC0250 is a high-power IGBT transistor designed for high-frequency switching applications. With a collector-emitter breakdown voltage of 1.2kV and a collector-emitter saturation voltage of 1.57V, this transistor is suitable for use in power electronic systems that require high current and voltage handling.

Product Features  

· High current handling: The AUIRGDC0250 can handle a maximum collector current of 141A and a pulsed current of 99A.

· High voltage handling: The transistor has a collector-emitter breakdown voltage of 1.2kV, making it suitable for use in high-voltage applications.

· Low saturation voltage: The transistor has a low collector-emitter saturation voltage of 1.57V, reducing power loss and increasing efficiency.

· High switching speed: The transistor has a switching energy of 15mJ (off) and a turn-off time of 485ns, making it suitable for high-frequency switching applications.

· High temperature range: The transistor operates within a temperature range of -55°C to 150°C, making it suitable for use in harsh environments.

Product Applications

· Primary applications: The AUIRGDC0250 is suitable for use in high-power electronic systems such as power supplies, motor drives, and power converters.

· Secondary applications: The transistor can also be used in other applications such as lighting systems, HVAC systems, and renewable energy systems.

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