Product Description
The CSD18543Q3A is a high-performance, single-channel N-channel power MOSFET designed for switching applications. This AVALANCHE RATED MOSFET features a robust design with a high avalanche energy rating of 55 mJ, making it suitable for demanding applications where high energy absorption is required.
Product Features
High avalanche energy rating of 55 mJ
High continuous drain current of 35A
Low drain-to-source resistance of 8.1mOhm
Operating temperature range of -55°C to 150°C
Surface mount package with a compact 8-PowerVDFN footprint
ROHS3 compliant and Pb-free
Matte Tin (Sn) terminal finish
Product Applications
Primary applications: Switching power supplies, motor control, and power conversion systems
Secondary applications: Audio amplifiers, LED drivers, and other high-frequency switching applications
Product Description
| Type | Description |
| ANSC PART# | ANSC- CSD18543Q3A |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Series | NexFET™ |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 9.9mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSONP (3x3.3) |
| Package / Case | 8-PowerVDFN |
| Base Product Number | CSD18543 |
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