Product Description
The FDG6301N is a dual N-channel metal-oxide-semiconductor (MOSFET) transistor , designed for surface-mount applications. This logic-level compatible MOSFET features a high level of integration, making it suitable for a wide range of applications. With a maximum continuous drain current of 220mA and a drain-to-source breakdown voltage of 25V, this transistor is ideal for switching and power control applications.
Product Features
· Logic-level compatible gate
· Enhancement mode operation
· High current rating of 220mA
· Low on-resistance of 4Ω
· Fast switching times, with a rise time of 4.5ns and a fall time of 4.5ns
· Operating temperature range of -55°C to 150°C
· Compliant with RoHS3 and lead-free standards
Product Applications
· Primary applications: Switching and power control in consumer electronics, industrial control systems, and automotive systems
· Secondary applications: Audio and video equipment, medical devices, and other applications requiring high-speed switching and low power consumption
Product Description
| Type | Description |
| ANSC PART# | ANSC- FDG6301N |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| FET, MOSFET Arrays | |
| Manufacturer | - |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Last Time Buy |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 220mA |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 220mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V |
| Power - Max | 300mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88 (SC-70-6) |
| Base Product Number | FDG6301 |
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