Description
IPB017N10N5ATMA1 is an N-channel Power MOSFET with a voltage of 100V. The operating temperature of IPB017N10N5ATMA1 is -55°C~175°C TJ and its maximum power dissipation is 375W Tc. IPB017N10N5ATMA1 has 7 pins and it is available in Tape & Reel (TR) packaging way. The FET Type of IPB017N10N5ATMA1 is N-Channel and its Mounting Type is Surface Mount.
Product Features
Ideal for high-frequency switching and sync. rec.
Excellent gate charge xRDS (on)product(FOM)
Very low on-resistance RDS(on)
N-channel, normal level
100 avalanche tested
Pb-free plating; RoHS compliant
Product Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
Product Description
| Type | Description |
| ANSC PART# | ANSC- IPB017N10N5ATMA1 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Series | OptiMOS™ |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 279µA |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 15600 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Base Product Number | IPB017 |
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