Description
The IPD50N06S4L12ATMA2 is an OptiMOS?-T2 Power-Transistor. Three terminal devices known as power transistors are made of semiconductor materials. They have collector, base, and emitter terminals. These gadgets are specially made to handle high current-voltage ratings.
Product Features
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
N-channel - Enhancement mode
AEC Q101 qualified
MSL1 up to 260°C peak reflow
Product Applications
Switch-mode power supplies (SMPS) Relays
Converters
Power amplifiers
Controlling
Generate electrical signals
Product Description
| Type | Description |
| ANSC PART# | ANSC- IPD50N06S4L12ATMA2 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Series | OptiMOS™ |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 2890 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-11 |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | IPD50 |
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