Product Overview 

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 230 mJ.A device's maximal input capacitance is 7700pF @ 19V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 429A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 24V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 240A, which is the maximum continuous current the device can conduct.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.

Product Features  

the avalanche energy rating (Eas) is 230 mJ

a continuous drain current (ID) of 429A

a drain-to-source breakdown voltage of 24V voltage

a threshold voltage of 4V

Product Applications

IRF1324S-7PPBF applications of single MOSFETs transistors.

Consumer Appliances

Lighting

Uninterruptible Power Supply

AC-DC Power Supply

Synchronous Rectification for ATX 1 Server I Telecom PSU

Motor drives and Uninterruptible Power Supplies

Micro Solar Inverter

DC/DC converters

Power Tools

Motor Drives and Uninterruptible Power Supples

Product Description

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Multiple product supply

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