Product Description
The IRFB4227PBF is a 200V single N-channel HEXFET? Power MOSFET PDP switch for plasma display panels that can be used for sustain, energy recovery, and pass switching. It achieves a low on-resistance per silicon area and an EPULSE rating by incorporating the most up-to-date approaches.
Product Features
● High Repetitive Peak Current Capability for Reliable Operation
● Short Fall & Rise Times for Fast Switching
● 175°C Operating Junction Temperature for Improved Ruggedness
● Repetitive Avalanche Capability for Robustness and Reliability
● Class-D Audio Amplifier 300W-500W (Half-bridge)
● Advanced Process Technology
● Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
● Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
● Low QG for Fast Respon
Product Applications
● Power Management
● Industrial
● DC-DC Converters
● Motor Control
● Automotive Applications
Product Description
| Type | Description |
| ANSC PART# | ANSC- IRFB4227PBF |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 46A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRFB4227 |
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