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Hot sale Original IRLML6401TRPBF Transistors MOSFET P-CH 12V 4.3A P-Channel 12 V 4.3A (Ta) 1.3W (Ta) Surface Mount SOT-23

IRLML6401TRPBF

Model:IRLML6401TRPBF

Manufacturer:Original

Package:SOT-23

Detail

Product Description

The IRLML6401TRPBF is a high-reliability, surface-mount P-channel enhancement-mode HEXFET . This discrete semiconductor product is designed for switching applications and features a robust construction with a maximum junction temperature of 150°C.

Product Features  

· High reliability and robust construction

· P-channel enhancement-mode HEXFET

· Surface-mount package (TO-236-3, SC-59, SOT-23-3)

· Lead-free and RoHS3 compliant

· Operating temperature range of -55°C to 150°C

· Maximum continuous drain current of 4.3A

· Maximum drain-to-source voltage of 12V

· Maximum gate-to-source voltage of ±8V

· Low on-resistance (Rds(on)) of 50mΩ

· Fast switching times, with a fall time of 210ns and rise time of 32ns

Product Applications

· Primary applications: Switching power supplies, DC-DC converters, and motor control systems

· Secondary applications: Audio amplifiers, LED drivers, and other high-frequency switching applications

 



Product Description

TypeDescription
ANSC PART#ANSC - IRLML6401TRPBF
CategoryDiscrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr-
SeriesHEXFET®
PackagingTape & Reel (TR)
Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs50mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds830 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro3™/SOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3
Base Product NumberIRLML6401


Actual image of the product 

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