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Hot sale Original JANTXV2N6788 Transistors MOSFET N-Channel 100 V 6A (Tc) 800mW (Tc) Through Hole TO-205AF (TO-39)

JANTXV2N6788

Model:JANTXV2N6788

Manufacturer:Original

Package:TO-205AF-3

Detail

Product Overview 


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 0.242 mJ.The drain current is the maximum continuous current this device can conduct, which is 6 A.Pulsed drain current is maximum rated peak drain current 24 A.A normal operation of the DS requires keeping the breakdown voltage above 100 V.

Product Features  

the avalanche energy rating (Eas) is 0.242 mJ

based on its rated peak drain current 24 A.

Product Applications

 

JANTXV2N6788 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies

Micro Solar Inverter

DC/DC converters

Power Tools

Motor Drives and Uninterruptible Power Supples

Synchronous Rectification

Battery Protection Circuit

Telecom 1 Sever Power Supplies

Industrial Power Supplies

PFC stages, hard switching PWM stages and resonant switching

 


Product Description


TypeDescription
ANSC PART# ANSC- JANTXV2N6788
CategoryDiscrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr-
Series-
PackagingBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs350mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Vgs (Max)±20V
FET Feature-
Power Dissipation (Max)800mW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
GradeMilitary
QualificationMIL-PRF-19500/555
Mounting TypeThrough Hole
Supplier Device PackageTO-205AF (TO-39)
Package / CaseTO-205AF Metal Can


Actual image of the product 

JANTXV2N6788


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