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Hot sale Original MMBFJ177LT1G Transistors JFET P-CH 30V SOT23-3 P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236)

MMBFJ177LT1G

Model:MMBFJ177LT1G

Manufacturer:Original

Package:SOT-23

Detail

Product Description

 

The MMBFJ177LT1G is a surface-mount, P-channel depletion-mode junction field-effect transistor (JFET) designed for use in a variety of applications. This transistor features a breakdown voltage of 30V, a continuous drain current of 20mA, and a maximum power dissipation of 225mW. The MMBFJ177LT1G is packaged in a TO-236-3, SC-59, or SOT-23-3 package and is available in a tape and reel format.

 

Product Features  

Breakdown voltage of 30V

Continuous drain current of 20mA

Maximum power dissipation of 225mW

Operating temperature range of -55°C to 150°C

Halogen-free and lead-free

RoHS3 compliant

Radiation-hardening not available

Radiation-hardening not available

Product Applications

 

Primary applications: Chopper circuits, audio amplifiers, and power supplies

Secondary applications: Switching circuits, motor control, and power conversion

 



Product Description


TypeDescription
ANSC PART# ANSC- MMBFJ177LT1G
CategoryDiscrete Semiconductor Products
Transistors
JFETs
Manufacturer-
Series-
PackagingTape & Reel (TR)
Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
Voltage - Breakdown (V(BR)GSS)30 V
Current - Drain (Idss) @ Vds (Vgs=0)1.5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id800 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds11pF @ 10V (VGS)
Resistance - RDS(On)300 Ohms
Power - Max225 mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Base Product NumberMMBFJ177


Actual image of the product 

MMBFJ177LT1G

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