Product Description
The MMBT2222A is a high-performance NPN bipolar junction transistor (BJT) , designed for use in a variety of applications. This transistor features a collector-base voltage of 75V, a collector-emitter breakdown voltage of 40V, and a collector-emitter saturation voltage of 300mV. With a maximum collector current of 600mA and a maximum power dissipation of 350mW, this transistor is suitable for a range of applications requiring high current and power handling.
Product Features
· High current handling capability: 600mA
· High power dissipation: 350mW
· High frequency operation: 300MHz
· Low collector-emitter saturation voltage: 300mV
· Surface mount package: TO-236-3, SC-59, SOT-23-3
· Lead-free and RoHS compliant
Product Applications
· Power amplifiers
· Switching applications
· Driver circuits
· Power supplies
Product Description
Type | Description |
|---|---|
ANSC PART# | ANSC - MMBT2222A |
Category | Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors |
Mfr | - |
Series | - |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1 A |
Voltage - Collector Emitter Breakdown (Max) | 40 V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
Power - Max | 350 mW |
Frequency - Transition | 300MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |
Base Product Number | MMBT2222 |
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