Product Overview
This device has a DC current gain of 120 @ 100mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 25V maximal voltage is present.
Product Features
the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 80mA, 800mA
a transition frequency of 100MHz
Product Applications
MMSS8050-H-TP applications of single BJT transistors.
· Inverter
· Interface
· Driver
· Muting
Product Description
Type | Description |
|---|---|
ANSC PART# | ANSC - MMSS8050-H-TP |
Category | Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors |
Mfr | - |
Series | - |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1.5 A |
Voltage - Collector Emitter Breakdown (Max) | 25 V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA |
Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 1V |
Power - Max | 625 mW |
Frequency - Transition | 100MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23 |
Base Product Number | MMSS8050 |
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