Description
The NJVMJD31CT4G is a high-performance NPN bipolar junction transistor (BJT) , designed for a wide range of applications. This single-transistor device features a collector-base voltage of 100V, collector-emitter breakdown voltage of 100V, and collector-emitter voltage of 40V, making it suitable for use in automotive and industrial applications.
Product Features
High collector-base voltage (VCBO) and collector-emitter breakdown voltage (BVCEO) of 100V
Low collector-emitter voltage (VCEO) of 40V
High DC current gain (hFE) of 10
Operating temperature range of -65°C to 150°C (TJ)
Surface mount package (TO-252-3, DPak, SC-63)
Lead-free and RoHS3 compliant
Automotive-grade (AEC-Q101) and suitable for industrial applications
Product Applications
Automotive applications, such as engine management systems, anti-lock braking systems, and power windows
Industrial applications, such as motor control, power supplies, and lighting systems
General-purpose applications, such as amplifiers, oscillators, and switches
Product Description
| Type | Description |
| ANSC PART# | ANSC- NJVMJD31CT4G |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Single Bipolar Transistors | |
| Mfr | - |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 4V |
| Power - Max | 1.56 W |
| Frequency - Transition | 3MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Base Product Number | NJVMJD31 |
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