Product Description
The NTD5865NLT4G is a high-performance, surface-mount N-channel power MOSFET, designed for switching applications. This discrete semiconductor product features a TO-252-3 package with a drain-source breakdown voltage of 60V and a continuous drain current of 46A at 25°C. The device has a low Rds(on) of 16mΩ at 20A and 10V, making it suitable for high-frequency switching applications.
Product Features
· High current handling capacity of 46A at 25°C
· Low Rds(on) of 16mΩ at 20A and 10V
· High avalanche energy rating of 36mJ
· Operating temperature range of -55°C to 175°C
· RoHS3 compliant and lead-free
· Surface-mount package with a gull-wing terminal form
Product Applications
· Primary applications:
· Switching power supplies
· Motor control systems
· Power conversion systems
· Secondary applications:
· Audio amplifiers
· Lighting control systems
· Industrial control systems
Product Description
| Type | Description |
| ANSC PART# | ANSC- NTD5865NLT4G |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | NTD5865 |
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