Product Details
| 3 AMPERES 3N08 Typ RDS(on) = 140 mΩ 3N08L Typ RDS(on) = 155 mΩ ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive system applications. Typical applications include integrated starter alternator, electronic power steering, electronic fuel injection, catalytic converter heaters and other high power applications made possible via an automotive 42 V bus. latest technology offering continues to offer high avalanche energy capability and low reverse recovery losses. |
Product Description
| Type | Description |
| ANSC PART# | ANSC- NTF3055L108T1G |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1.5A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Vgs (Max) | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 (TO-261) |
| Package / Case | TO-261-4, TO-261AA |
| Base Product Number | NTF3055 |
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