Description
The NVMFD5877NLT1G is a dual N-channel metal-oxide semiconductor (MOS) field-effect transistor (FET) array. This device is designed for switching applications and features a logic-level gate, making it suitable for use in a variety of electronic systems. With a maximum power dissipation of 3.2W and a maximum current of 17A, this FET array is capable of handling high-power and high-current applications.
Product Features
Dual N-channel MOSFET array
Logic-level gate for easy integration with logic circuits
High-power dissipation of 3.2W
High-current capability of 17A
Operating temperature range of -55°C to 175°C
Surface-mount package with a 8-PowerTDFN footprint
Lead-free and halogen-free construction
Compliant with RoHS3 and JESD-30 and JESD-609 standards
Product Applications
Switching applications in power supplies, motor control, and industrial automation systems
High-power and high-current applications in automotive, aerospace, and military systems
Logic-level gate applications in digital circuits, such as logic gates and buffers
Product Description
| Type | Description |
| ANSC PART# | ANSC- NVMFD5877NLT1G |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| FET, MOSFET Arrays | |
| Manufacturer | - |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
| Power - Max | 3.2W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Base Product Number | NVMFD5877 |
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