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Hot sale OriginaL SI7461DP-T1-GE3 Transistors MOSFET (Metal Oxide) P-Channel 60 V 8.6A (Ta) 1.9W (Ta) Surface Mount

SI7461DP-T1-GE3

Model:SI7461DP-T1-GE3

Manufacturer:Original

Package:QFN8

Detail

Product Description


Type

Description

PART#

SI7461DP-T1-GE3

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

/

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

8.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14.5mOhm @ 14.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

190 nC @ 10 V

Vgs (Max)

±20V

FET Feature

-

Power Dissipation (Max)

1.9W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Grade

-

Qualification

-

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Base Product Number

SI7461


Actual image of the product 

SI7461DP-T1-GE3_1

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