Product Overview 

A device's maximum input capacitance is 1250pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.Its drain current is 23.4A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 70A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2.5V.

Product Features  

a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 20V voltage
based on its rated peak drain current 70A.
a threshold voltage of 2.5V

Product Applications

SIR424DP-T1-GE3 applications of single MOSFETs transistors.

· Power Tools

· Motor Drives and Uninterruptible Power Supples

· Synchronous Rectification

· Battery Protection Circuit

· Telecom 1 Sever Power Supplies

· Industrial Power Supplies

· PFC stages, hard switching PWM stages and resonant switching

· PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

· Lighting, Server, Telecom and UPS.

· DC-to-DC converters

Product Description

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