Product Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1250pF @ 25V.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.
Product Features
a 60V drain to source voltage (Vdss)
Product Applications
SQ4850EY-T1_GE3 applications of single MOSFETs transistors.
· DC/DC converters
· Power Tools
· Motor Drives and Uninterruptible Power Supples
· Synchronous Rectification
· Battery Protection Circuit
· Telecom 1 Sever Power Supplies
· Industrial Power Supplies
· PFC stages, hard switching PWM stages and resonant switching
· PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
· Lighting, Server, Telecom and UPS.
Product Description
Type | Description |
|---|---|
ANSC PART# | ANSC - SQ4850EY-T1_GE3 |
Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr | - |
Series | TrenchFET® |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 22mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 6.8W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Grade | Automotive |
Qualification | AEC-Q101 |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Base Product Number | SQ4850 |
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