Product Description
The STGF14NC60KD is a 600 V short-circuit robust IGBT with a current rating of 14 amps. These devices are advanced PowerMESHTM technology-based IGBTs that are extremely fast. This method ensures a good balance between switching performance and low on-state behavior. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed.
Product Features
Very soft ultrafast recovery antiparallel diode
Short-circuit withstand time 10 μs
Low on voltage drop (VCE(sat))
Low Cres / Cies ratio (no cross-conduction susceptibility)
High-power
Product Applications
High frequency inverters
SMPS and PFC in both hard switch and resonant topologies
Motor drives
Consumer electronics
Industrial technology
Product Description
| Type | Description |
| ANSC PART# | ANSC- STGF14NC60KD |
| Category | Discrete Semiconductor Products |
| Transistors | |
| IGBTs | |
| Single IGBTs | |
| Manufacturer | - |
| Series | PowerMESH™ |
| Packaging | Tube |
| Part Status | Active |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 11 A |
| Current - Collector Pulsed (Icm) | 50 A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 7A |
| Power - Max | 28 W |
| Switching Energy | 82µJ (on), 155µJ (off) |
| Input Type | Standard |
| Gate Charge | 34.4 nC |
| Td (on/off) @ 25°C | 22.5ns/116ns |
| Test Condition | 390V, 7A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 37 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220FP |
| Base Product Number | STGF14 |
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