Product Description
The STN3P6F6 is a high-performance P-channel MOSFET, designed for switching applications. This discrete semiconductor product is part of the DeepGATE? and STripFET? VI series, offering excellent reliability and efficiency.
Product Features
· High drain current capability: 3A continuous, 3A maximum
· High drain-to-source breakdown voltage: -60V
· Low on-resistance: 160mΩ at 1.5A, 10V
· Fast switching times: 3.7ns fall time, 5.3ns rise time
· High power dissipation: 2.6W
· Surface-mount package: TO-261-4, TO-261AA
· Lead-free and RoHS3 compliant
· Operating temperature range: -55°C to 175°C
Product Applications
· Switching applications in automotive, industrial, and consumer electronics
· Power management and control in battery-powered devices
· High-frequency switching in telecommunications and data communication systems
Product Description
| Type | Description |
| ANSC PART# | ANSC- STN3P6F6 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Series | DeepGATE™, STripFET™ VI |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 48 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.6W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
| Package / Case | TO-261-4, TO-261AA |
| Base Product Number | STN3 |
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