Product Description
The STV270N4F3 MOSFET is built on STripFET III Power MOSFET technology, which is one of the most recent advancements and has been specifically tuned to minimize on-state resistance while delivering outstanding switching performance. The part has reduced conduction losses to a large extent and has a very low parasitic inductance thanks to its low profile.
Product Features
State-of-the-art packaging
High reliability and safety
Conduction losses reduced
Low profile
Very low parasitic inductance
Product Applications
Synchronous Rectification
UPS
Motor Control
SMPS
Power-Over-Ethernet (PoE)
Inverter
Automotive
Product Description
Type | Description |
ANSC PART# | ANSC - STV270N4F3 |
Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr | - |
Series | STripFET™ III |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Last Time Buy |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 270A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.5mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 10-PowerSO |
Package / Case | PowerSO-10 Exposed Bottom Pad |
Base Product Number | STV270 |
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Payment&Transportation
Official Certificate&Certificate
Standard packaging
Multiple product supply
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