Product Details
| CSD25310Q2 MOSFET Description The CSD25310Q2 is a 19.9 m, –20 V P-Channel device that is designed to give the lowest on resistance and gate charge while maintaining outstanding thermal characteristics in an ultra-low profile. The device's low resistance combined with an incredibly small footprint in a SON 2 mm 2 mm plastic container make it perfect for battery-operated space-restricted tasks. CSD25310Q2 MOSFET Features Low On-Resistance Low Thermal Resistance Ultra-Low Qg and Qgd SON 2-mm × 2-mm Plastic Package Halogen Free Pb-Free RoHS Compliant CSD25310Q2 MOSFET Applications Battery Protection Load Management Portable Devices MCU Battery Management |
Product Description
| TYPE | DESCRIPTION |
| ANSC PART# | ANSC- CSD25310Q2 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Original |
| Series | NexFET™ |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 23.9mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.7 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 655 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.9W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-WSON (2x2) |
| Package / Case | 6-WDFN Exposed Pad |
| Base Product Number | CSD25310 |
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