1N5550 Product details
DESCRIPTION
This “standard recovery” rectifier diode series is military qualified and is ideal for high-reliability applications
where a failure cannot be tolerated.
These industry-recognized 5.0 amp rated rectifiers for working peak reverse voltages from 200 to 1000
volts are hermetically sealed with voidless-glass construction using an internal “Category 1”
metallurgical bond.
These devices are also available in surface mount MELF package configurations.
Microsemi also offers numerous other rectifier products to meet higher and lower
current ratings with various recovery time speed requirements including fast
and ultrafast device types in both through-hole and surface mount packages.
FEATURES
• JEDEC registered 1N5550 thru 1N5554 series.
• Voidless hermetically sealed glass package.
• Extremely robust construction.
• Quadruple-layer passivation.
• Internal “Category 1” metallurgical bonds.
• JAN, JANTX, JANTXV and JANS qualified versions available per MIL-PRF-19500/420.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Standard recovery 5 amp 200 to 1000 volts rectifier series.
• Military and other high-reliability applications.
• General rectifier applications including bridges, half-bridges, catch diodes, etc.
• High forward surge current capability.
• Low thermal resistance.
• Controlled avalanche with peak reverse power capability.
• Extremely robust construction.
• Inherently radiation hard as described in Microsemi “MicroNote 050”.
Product Description
ANSC PART# | ANSC- 1N5550 |
Part# | 1N5550 |
Type： | Electronic components |
Manufactor | Microchip Technology |
DC | new |
Actual image of the product
TYPE | DESCRIPTION |
|---|---|
Category | Discrete Semiconductor Products Diodes Rectifiers Single Diodes |
Mfr | Microchip Technology |
Series | - |
Packaging | Bulk |
Part Status | Active |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) | 200 V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 9 A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 2 µs |
Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | B, Axial |
Supplier Device Package | B, Axial |
Operating Temperature - Junction | -65°C ~ 175°C |
Base Product Number | 1N5550 |
Product datasheet
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