Product Details
| Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predecessors, the use of a heat sink with Dual Cool packaging technology provides even more impressive results. Test results prove that, when a heat sink is used with our Dual Cool package technology, synchronous buck converters deliver higher output current and increased power density. With Fairchild’s trench silicon technology, Dual Cool packaging technology proves to be a clear leader in power density and thermal performance. Our Dual Cool package solutions are lead free and RoHS compliant and are available in 3.3 mm x 3.3 mm and 5 mm x 6 mm PQFN packages. Features • Top-side cooling, lower thermal resistance from junction to top • Same land pattern as 5 mm x 6 mm and 3.3 mm x 3.3 mm PQFN – JEDEC standard • Allows higher current and power dissipation • Highest power density for DC-DC applications • Use with or without a heat sink, reduces the number of qualifed components in the BOM • Multiple suppliers without cross licensing requirements • High degree of production commonality with standard PQFN packaging • 25 V - 150 V portfolio Applications • Point-of-load (POL) synchronous-buck conversion • Servers • Telecommunications, routing and switching • Heat path from top only |
Product Description
| Type# | Description |
| ANSC PART# | ANSC -FDMS86101 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Original |
| Series | PowerTrench® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 12.4A (Ta), 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package / Case | 8-PowerTDFN |
| Base Product Number | FDMS86 |
Product Photos
Product datasheet
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