Product Details
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
Features
• Q1: N-Channel
7.0A, 30V RDS(on) = 0.028W @ VGS = 10V
RDS(on) = 0.040W @ VGS = 4.5V
• Q2: P-Channel
-5A, -30V RDS(on) = 0.052W @ VGS = -10V
RDS(on) = 0.080W @ VGS = -4.5V
• Fast switching speed
• High power and handling capability in a widely used surface mount package
Product Description
Type | Description |
|---|---|
Category | Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays |
Manufacturer | - |
Series | PowerTrench® |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 7A, 5A |
Rds On (Max) @ Id, Vgs | 28mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 575pF @ 15V |
Power - Max | 900mW |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |
Base Product Number | FDS89 |
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Product datasheet
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