Product Details
| Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Fully Avalanche Rated |
Product Description
| Type# | Description |
| PART# | IRFZ44N |
| Manufacturer | Original |
| Part Package | TO-220AB |
| Package Description | TO-220AB, 3 PIN |
| Pin Count | 3 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 150 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 55 V |
| Drain Current-Max (ID) | 49 A |
| Drain-source On Resistance-Max | 0.0175 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 83 W |
| Power Dissipation-Max (Abs) | 94 W |
| Pulsed Drain Current-Max (IDM) | 160 A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
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