Product Description
Advanced technology has been used to achieve extremely low on-resistance per unit silicon area. Combined with the exceptionally fast switching speeds and rugged device design of the HEXFET Power MOSFET, designers are able to obtain extremely efficient and reliable devices suitable for a wide range of applications.
The SO-8 package has been improved with a custom lead frame, enhanced thermal characteristics and multi-die support capabilities, making it ideal for a wide range of power applications. These improvements enable multiple devices to be used with significantly reduced board space. The package design is suitable for vapor phase infrared or wave soldering techniques.
Product Features
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET Surface Mount
Fully Avalanche Rated
Lead-Free
Product Applications
designers are provided with extremely efficient and reliable devices that can be used in a variety of applications.
Product Description
Type | Description |
|---|---|
ANSC PART# | ANSC - IRF7311TRPBF |
Category | Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays |
Manufacturer | - |
Series | HEXFET® |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6.6A |
Rds On (Max) @ Id, Vgs | 29mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 15V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Base Product Number | IRF731 |
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Product datasheet
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