Product Details
MOSFET – Power, Single N-Channel 40 V, 6.7 m, 40 A
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• NVTFS5811NLWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Product Description
Type | Description |
|---|---|
Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr | - |
Series | - |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 52mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1258 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 3.2W (Ta), 21W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Grade | Automotive |
Qualification | AEC-Q101 |
Mounting Type | Surface Mount |
Supplier Device Package | 8-WDFN (3.3x3.3) |
Package / Case | 8-PowerWDFN |
Base Product Number | NVTFS5116 |
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Product datasheet
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