Product Details
MOSFET – Power, Single N-Channel 40 V, 6.7 m, 40 A
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• NVTFS5811NLWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Product Description
|
Type |
Description |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
- |
|
Series |
- |
|
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
|
Part Status |
Active |
|
FET Type |
P-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
60 V |
|
Current - Continuous Drain (Id) @ 25°C |
6A (Ta) |
|
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
|
Rds On (Max) @ Id, Vgs |
52mOhm @ 7A, 10V |
|
Vgs(th) (Max) @ Id |
3V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
25 nC @ 10 V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
1258 pF @ 25 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
3.2W (Ta), 21W (Tc) |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Grade |
Automotive |
|
Qualification |
AEC-Q101 |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
8-WDFN (3.3x3.3) |
|
Package / Case |
8-PowerWDFN |
|
Base Product Number |
NVTFS5116 |
Actual image of the product
