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Hot sale original DMN1019USN-7 Transistors MOSFET N-Channel 12 V 9.3A (Ta) 680mW (Ta) Surface Mount SC-59-3

DMN1019USN-7

Model:DMN1019USN-7

Manufacturer:Original

Package:SOT23

Detail

Product Details


Features

• Extremely Low On-Resistance:
170mΩ @ VGS = 4.5V
• High Drain Current: 1.1A
• Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
• Lead Free By Design/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• ESD Protected Gate
• "Green" Device (Note 3)


Product Description

Type

Description

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

-

Series

-

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12 V

Current - Continuous Drain (Id) @ 25°C

9.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 2.5V

Rds On (Max) @ Id, Vgs

10mOhm @ 9.7A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50.6 nC @ 8 V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

2426 pF @ 10 V

FET Feature

-

Power Dissipation (Max)

680mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Grade

-

Qualification

-

Mounting Type

Surface Mount

Supplier Device Package

SC-59-3

Package / Case

TO-236-3, SC-59, SOT-23-3

Base Product Number

DMN1019


Actual image of the product 

DMN1019USN-7

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