Product Details
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Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industrys smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. ● Ultra Low On-Resistance ● P-Channel MOSFET ● Surface Mount ● Available in Tape & Reel ● Low Gate Charge |
Product Description
| Type | Description |
| ANSC PART# | ANSC-IRLML6344TRPBF |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Original |
| Series | HEXFET® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
|
Current - Continuous Drain (Id) @ 25°C |
5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package |
Micro3™/SOT-23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | IRLML6344 |
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