Product Details
Brief Description: The MRF6VP3450HR6 is a N-Channel LDMOS (Dual) RF MOSFET transistor manufactured by NXP USA Inc. It is designed for enhancement mode operation and has a peak output power of 90W. Features: Frequency: 860MHz Gain: 22.5dB Power Output: 90W Operating Temperature: -40°C to 225°C Voltage Rated: 110V Current - Test: 1.4A Transistor Type: LDMOS (Dual) FET Technology: Metal-Oxide Semiconductor Configuration: Single Case Connection: SOURCE Terminal Form: FLAT Surface Mount: YES Application Grade: The MRF6VP3450HR6 is designed for high-power amplifier applications, specifically for use in RF systems operating at 860MHz. Applications: * RF amplifiers * Power amplifiers * Wireless communication systems * Radar systems * Satellite communication systems Additional Information: * The part is obsolete and not qualified. * It is ROHS3 compliant and has a factory lead time of 10 weeks. * The packaging is tape and reel (TR) with a package/case of NI-1230. * The transistor element material is silicon. |
Product Description
Type# | Description |
PART# | MRF6VP3450HR6 |
Manufacturer | Freescale |
Package Description | ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN |
Pin Count | 4 |
Manufacturer Package | CASE 375D-05 |
Case Connection | SOURCE |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 110 V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
JESD-30 Code | R-CDFM-F4 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 225 °C |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL |
Qualification Status | Not Qualified |
Surface Mount | YES |
Terminal Form | FLAT |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 40 |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
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