Samsung Electronics has basically completed the development of the 8nm version of eMRAM memory process upgrade_News_ALL NEW SEMI (ANSC)

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Samsung Electronics has basically completed the development of the 8nm version of eMRAM memory process upgrade

2024-05-31

Samsung Electronics representative stated at the AI-PIM seminar in South Korea that they are gradually advancing the process upgrade of eMRAM memory as planned, and the technology development of 8nm eMRAM has been basically completed. As a new type of memory, MRAM is based on the principle of magnetism and has non-volatile properties. It does not need to constantly refresh data like DRAM memory, making it more energy-efficient and efficient; At the same time, the write speed of MRAM is 1000 times that of NAND, supporting applications that require higher write rates.

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▲ eMRAM storage principle

EMRAM refers to MRAM for the embedded field. Samsung Electronics currently has a production capacity of 28nm eMRAM and is supplying terminal products such as smartwatches.

It is reported that Samsung Electronics announced plans to mass produce 14nm eMRAM in 2024; Mass production of 8nm eMRAM in 2026; By 2027, further progress will be made to achieve mass production of the 5nm eMRAM process.

At present, Samsung Electronics has completed the development of 14nm eMRAM, and the development of 8nm eMRAM is also basically completed. It is still planned to launch 5nm eMRAM in 2027.

Samsung Electronics believes that the demand for eMRAM in the automotive industry will continue to grow in the future, and its products currently have a temperature resistance of 150-160 ℃, which is sufficient to meet the strict requirements of the automotive industry for semiconductors.

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