Product Details
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 2nd generation IGBTs offer the optimum
performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
Features
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
• High Input Impedance
• Fast Switching: EOFF = 7.5 uJ/A
• Tightened Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
Product Description
|
ANSC PART# |
ANSC- FGH60N60SMD |
|
Part# |
FGH60N60SMD |
|
Type： |
Transistors |
|
Manufactor |
Original |
|
DC |
new |
Actual image of the product
|
TYPE |
DESCRIPTION |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors IGBTs Single IGBTs |
|
Manufacturer |
onsemi |
|
Series |
- |
|
Packaging |
Tube |
|
Part Status |
Active |
|
IGBT Type |
Field Stop |
|
Voltage - Collector Emitter Breakdown (Max) |
600 V |
|
Current - Collector (Ic) (Max) |
120 A |
|
Current - Collector Pulsed (Icm) |
180 A |
|
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 60A |
|
Power - Max |
600 W |
|
Switching Energy |
1.26mJ (on), 450µJ (off) |
|
Input Type |
Standard |
|
Gate Charge |
189 nC |
|
Td (on/off) @ 25°C |
18ns/104ns |
|
Test Condition |
400V, 60A, 3Ohm, 15V |
|
Reverse Recovery Time (trr) |
39 ns |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Mounting Type |
Through Hole |
|
Package / Case |
TO-247-3 |
|
Supplier Device Package |
TO-247-3 |
|
Base Product Number |
FGH60 |
Product datasheet
For more information, please download
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Official Certificate&Certificate
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Multiple product supply
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