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Hot sale original BLF3G21-30 Transistors UHF BAND Si N-CHANNEL RF POWER MOSFET CERAMIC PACKAGE-2 FET RF Power

BLF3G21-30

Model:BLF3G21-30

Manufacturer:NXP

Package:TO-59

Detail

Product Details


RF Manual 16th edition


RF products

June 2012


NXP enables you to unleash the performance of next-generation RF and microwave designs

NXPs RF Manual is one of the most important reference tools on the market for today’s RF designers. It features our complete range of RF products, from low- to high-power signal conditioning, organized by application and function, and with a focus on design-in support.

When it comes to RF, the first thing on the designers mind is to meet the specified performance. NXP brings clarity to every aspect of your design challenge, so you can unleash the performance of your RF and microwave designs. NXP delivers a portfolio of high-performance RF technology that allows you to differentiate your product – no matter where in the RF world you are. That’s why customers trust us with their mission-critical designs. Whether it’s LDMOS and GaN for high-power RF applications or Si and SiGe:C BiCMOS for your small-signal needs, we’ve got you covered. Our broad portfolio of far-reaching technologies gives you the freedom to design with confidence.


Product Description


TYPE# DESCRIPTION
ANSC PART# ANSC- BLF3G21-30
Manufacturer NXP
Package Description CERAMIC PACKAGE-2
Pin Count 2
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 4.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON


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BLF3G21-30

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