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Hot sale Original STW50N65DM2AG Transistors MOSFET N-CH 650V 28A TO247 N-Channel 650 V 28A (Tc) 300W (Tc) Through Hole

STW50N65DM2AG

Model:STW50N65DM2AG

Manufacturer:STM

Package:TO247

Detail

Product Details


Brief Description: The STW50N65DM2AG is an N-Channel MOSFET from STMicroelectronics, designed for high-power applications. It features a TO-247-3 package and is suitable for through-hole mounting.

Features:

  • Continuous drain current (ID): 28A

  • Drain-to-source voltage (Vdss): 650V

  • Drive voltage (Max Rds On, Min Rds On): 10V

  • Gate charge (Qg) (Max) @ Vgs: 70nC @ 10V

  • Input capacitance (Ciss) (Max) @ Vds: 3200pF @ 100V

  • Rds On (Max) @ Id, Vgs: 87mΩ @ 19A, 10V

  • Operating temperature: -55°C to 150°C TJ

  • Power dissipation (Max): 300W Tc

  • Vgs (Max): ±25V

  • Vgs(th) (Max) @ Id: 5V @ 250μA

Application Grade: The STW50N65DM2AG is designed for high-power applications, such as:

  • Automotive systems

  • Industrial control systems

  • Power supplies

  • Motor control systems

Applications:

  • High-power switching applications

  • High-voltage power supplies

  • Motor control systems

  • Automotive systems, including engine management and transmission control

  • Industrial control systems, including process control and automation

This MOSFET is suitable for applications requiring high power, high voltage, and high current handling capabilities. Its TO-247-3 package and through-hole mounting make it easy to integrate into various systems.


Product Description

Type# Description
ANSC PART# ANSC-STW50N65DM2AG
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr STM
Series MDmesh™ DM2
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 87mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 100 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number STW50


Product Photos

STW50N65DM2AG

Product datasheet 

For more information, please download



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